منابع مشابه
Electronic band structure of a Carbon nanotube superlattice
By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...
متن کاملElectronic band structure of a Carbon nanotube superlattice
By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...
متن کاملAn Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch
Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...
متن کاملBand hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells
We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...
متن کاملTHERMAL CONDUCTIVITY OF InAs/AlSb SUPERLATTICES
In this work, we present experimental studies on the cross-plane thermal conductivity of InAs/AlSb superlattices. The thermal conductivities of MBE grown InAs/AlSb superlattices are measured using the 3ω method from 80-300 K. The influence of the growth temperature and post annealing is investigated. Significant reductions in thermal conductivity are observed in these superlattices compared to ...
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ژورنال
عنوان ژورنال: World Journal of Condensed Matter Physics
سال: 2012
ISSN: 2160-6919,2160-6927
DOI: 10.4236/wjcmp.2012.23021